Doping of a dielectric layer as a new alternative for increasing sensitivity of the contactless conductivity detection in microchips

Autor(es)

Lima, Renato Sousa ^{[1, 2]} ; Segato, Thiago Pinotti ^{[1, 2]} ; Gobbi, Angelo Luiz ^[3] ; Tomazelli Coltro, Wendell Karlos ^{[4, 2]} ; Carrilho, Emanuel ^{[1, 2]}

Afiliação do(s) autor(es)

^[1] Univ Sao Paulo, Inst Quim Sao Carlos, Sao Carlos, SP - Brazil

^[2] Inst Nacl Ciencia & Tecnol Bioanalit, Campinas, SP - Brazil

^[3] Ctr Nacl Pesquisa Energia & Mat, Lab Nacl Nanotecnol, Campinas, SP - Brazil

^[4] Univ Fed Goias, Inst Quim, Goiania, Go - Brazil

• Tipo de documento: Artigo Científico
• Fonte: LAB ON A CHIP; v. 11, n. 24, p. 4148-4151, 2011.
• Citações Web of Science: 13

Resumo

This communication describes a new procedure to increase the sensitivity of C(4)D in PDMS/glass microchips. The method consists in doping the insulating layer (PDMS) over the electrodes with nanoparticles of TiO(2), increasing thus its dielectric constant. The experimental protocol is simple, inexpensive, and fast. (AU)

• Processo FAPESP: 10/08559-9 - Sistemas microfluídicos eletroquímicos ultrassensíveis
• Beneficiário: Renato Sousa Lima
• Modalidade de apoio: Bolsas no Brasil - Doutorado