Doping of a dielectric layer as a new alternative for increasing sensitivity of the contactless conductivity detection in microchips

Lima, Renato Sousa; Segato, Thiago Pinotti; Gobbi, Angelo Luiz; Tomazelli Coltro, Wendell Karlos; Carrilho, Emanuel

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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Doping of a dielectric layer as a new alternative for increasing sensitivity of the contactless conductivity detection in microchips

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Author(s):	Lima, Renato Sousa ^{[1, 2]} ; Segato, Thiago Pinotti ^{[1, 2]} ; Gobbi, Angelo Luiz ^[3] ; Tomazelli Coltro, Wendell Karlos ^{[4, 2]} ; Carrilho, Emanuel ^{[1, 2]} Total Authors: 5
Affiliation:	^[1] Univ Sao Paulo, Inst Quim Sao Carlos, Sao Carlos, SP - Brazil ^[2] Inst Nacl Ciencia & Tecnol Bioanalit, Campinas, SP - Brazil ^[3] Ctr Nacl Pesquisa Energia & Mat, Lab Nacl Nanotecnol, Campinas, SP - Brazil ^[4] Univ Fed Goias, Inst Quim, Goiania, Go - Brazil Total Affiliations: 4
Document type:	Journal article
Source:	LAB ON A CHIP; v. 11, n. 24, p. 4148-4151, 2011.
Web of Science Citations:	13
Abstract
This communication describes a new procedure to increase the sensitivity of C(4)D in PDMS/glass microchips. The method consists in doping the insulating layer (PDMS) over the electrodes with nanoparticles of TiO(2), increasing thus its dielectric constant. The experimental protocol is simple, inexpensive, and fast. (AU)

FAPESP's process:	10/08559-9 - Ultrasensitive electrochemical microfluidic systems
Grantee:	Renato Sousa Lima
Support Opportunities:	Scholarships in Brazil - Doctorate

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