Lead telluride p-n junctions for infrared detection: electrical and optical characteristics

Autor(es)

A. S. Barros ^[1] ; E. Abramof ^[2] ; P. H. O. Rappl ^[3]

Afiliação do(s) autor(es)

^[1] Instituto Nacional de Pesquisas Espaciais. Laboratório Associado de Sensores e Materiais - Brasil

^[2] Instituto Nacional de Pesquisas Espaciais. Laboratório Associado de Sensores e Materiais - Brasil

^[3] Instituto Nacional de Pesquisas Espaciais. Laboratório Associado de Sensores e Materiais - Brasil

• Tipo de documento: Artigo Científico
• Fonte: Brazilian Journal of Physics; v. 36, p. 474-477, 2006-06-00.

Resumo

PbTe mesa diodes were fabricated from a series of p - n junctions grown on BaF2 substrates. For this series, the hole concentration was kept constant at 10(17) cm-3 and the electron concentration varied between 10(17) and 10(19) cm-3. Capacitance versus voltage analysis revealed that for n > 10(18) cm-3, a one-sided abrupt junction is formed. The direct and reverse branches of the current versus voltage curves exhibited different forms among the diodes. The R0A product varied between 0.23 and 31.8 omegacm², and the integral detectivity ranged from 1.1x10(8) to 6.5x10(10) cmHz½W-1. The performance of the best PbTe photodiodes fabricated here is comparable to the commercial InSb and HgCdTe infrared detectors, and to the PbTe sensors grown on Si substrate. (AU)

• Processo FAPESP: 00/12529-6 - Medidas de efeito Hall dependente com a temperatura e difratometria de raios-X de alta resolução aplicados a diversos materiais
• Beneficiário: Eduardo Abramof
• Modalidade de apoio: Auxílio à Pesquisa - Regular