| Texto completo | |
| Autor(es): |
Carvalho, A. R. H.
[1]
;
Gordo, V. Orsi
[1]
;
Galeti, H. V. A.
[2]
;
Gobato, Y. Galvao
[1]
;
de Godoy, M. P. F.
[1]
;
Kudrawiec, R.
[3]
;
Lemine, O. M.
[4]
;
Henini, M.
[5]
Número total de Autores: 8
|
| Afiliação do(s) autor(es): | [1] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP - Brazil
[3] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw - Poland
[4] Al Imam Mohamed Bin Saoud Islamic Univ, Coll Sci, Dept Phys, Riyadh 11623 - Saudi Arabia
[5] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Sch Phys & Astron, Nottingham NG7 2RD - England
Número total de Afiliações: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 47, n. 7 FEB 19 2014. |
| Citações Web of Science: | 9 |
| Resumo | |
We have investigated the effect of long thermal annealing (3 h) at 200 degrees C on the physical properties of GaBiAs layers with a Bi concentration of 3% by using photoluminescence (PL) and polarized resolved PL under magnetic fields up to 14 T. The PL intensity and the diamagnetic shift of the annealed samples increased substantially. This indicates a reduction of carrier/exciton localization due to defects. In addition, it was found that the degree of the electron spin polarization increases up 41% at 14 T after thermal annealing due to the reduction of the density of defects. (AU) | |
| Processo FAPESP: | 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores |
| Beneficiário: | Yara Galvão Gobato |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |