| Texto completo | |
| Autor(es): |
Lemine, O. M.
[1]
;
Alkaoud, A.
[1]
;
Avanco Galeti, H. V.
[2]
;
Gordo, V. Orsi
[3]
;
Gobato, Y. Galvao
[3]
;
Bouzid, Houcine
[4]
;
Hajry, A.
[4]
;
Henini, M.
[5]
Número total de Autores: 8
|
| Afiliação do(s) autor(es): | [1] Al Imam Mohammad Ibn Saud Islamic Univ IMSIU, Coll Sci, Dept Phys, Riyadh 11623 - Saudi Arabia
[2] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13565905 Sao Carlos, SP - Brazil
[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[4] Najran Univ, PCSED, Najran 11001 - Saudi Arabia
[5] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD - England
Número total de Afiliações: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | SUPERLATTICES AND MICROSTRUCTURES; v. 65, p. 48-55, JAN 2014. |
| Citações Web of Science: | 14 |
| Resumo | |
The effects of long time thermal annealing at 200 degrees C on the optical and structural properties of GaAs1-xBix alloys were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). FESEM images show that bismuth islands nucleate on the surface and their diameter increases after annealing. It was observed a PL intensity enhancement and a small blue shift in PL peak energy after thermal annealing at 200 degrees C for 3 h of GaAs1-xBix alloys which was associated to the reduction of the density of defects. However these defects are not completed removed by thermal annealing although an important PL intensity improvement is observed. (C) 2013 Elsevier Ltd. All rights reserved. (AU) | |
| Processo FAPESP: | 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores |
| Beneficiário: | Yara Galvão Gobato |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |