Homogeneous Gaussian Profile P+-Type Emitters: Updated Parameters and Metal-Grid Optimization

Autor(es)

M. Cid ^[1] ; N. Stem ^[2]

Afiliação do(s) autor(es)

^[1] Universidade de São Paulo. Escola Politécnica. Depto. de Engenharia de Sistemas Eletrônicos

^[2] Universidade de São Paulo. Escola Politécnica. Depto. de Engenharia de Sistemas Eletrônicos

• Tipo de documento: Artigo Científico
• Fonte: MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 5, n. 4, p. 427-432, 2002-10-00.

Resumo

P+-type emitters were optimized keeping the base parameters constant. Updated internal parameters were considered. The surface recombination velocity was considered variable with the surface doping level. Passivated homogeneous emitters were found to have low emitter recombination density and high collection efficiency. A complete structure p+nn+ was analyzed, taking into account optimized shadowing and metal-contacted factors for laboratory cells as function of the surface doping level and the emitter thickness. The base parameters were kept constant to make the emitter characteristics evident. The most efficient P+-type passivated homogeneous emitters, provide efficiencies around 21% for a wide range of emitter sheet resistivity (50 -- 500 omega/<img src="/img/revistas/mr/v5n4/qd.gif">) with the surface doping levels Ns=1×10(19) cm-3 and 5×10(19) cm-3. The output electrical parameters were evaluated considering the recently proposed value n i=9.65×10(9) (cm-3). A non-significant increase of 0.1% in the efficiency was obtained, validating all the conclusions obtained in this work, considering n i=1×10(10) cm-3. (AU)

• Processo FAPESP: 95/09435-0 - Desenvolvimento de células solares de silício de alto rendimento
• Beneficiário: Manuel Cid Sánchez
• Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores