Dispersion of electron g-factor with optical transition energy in (In,Ga)As/GaAs self-assembled quantum dots

Autor(es)

Schwan, A. ^[1] ; Meiners, B-M. ^[1] ; Henriques, A. B. ^[2] ; Maia, A. D. B. ^[2] ; Quivy, A. A. ^[2] ; Spatzek, S. ^[1] ; Varwig, S. ^[1] ; Yakovlev, D. R. ^[1] ; Bayer, M. ^[1]

Afiliação do(s) autor(es)

^[1] Tech Univ Dortmund, D-44221 Dortmund - Germany

^[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Applied Physics Letters; v. 98, n. 23 JUN 6 2011.
• Citações Web of Science: 14

Resumo

The electron spin precession about an external magnetic field was studied by Faraday rotation on an inhomogeneous ensemble of singly charged, self-assembled (In,Ga)As/GaAs quantum dots. From the data the dependence of electron g-factor on optical transition energy was derived. A comparison with literature reports shows that the electron g-factors are quite similar for quantum dots with very different geometrical parameters, and their change with transition energy is almost identical. (C) 2011 American Institute of Physics. {[}doi:10.1063/1.3588413] (AU)

• Processo FAPESP: 09/16912-3 - Investigação magneto-óptica de semicondutores para a spintrônica
• Beneficiário: Andre Bohomoletz Henriques
• Modalidade de apoio: Bolsas no Exterior - Pesquisa
• Processo FAPESP: 10/10452-8 - Espectroscopia de harmônicos múltiplos, orientação de spin e magnetização instantânea utilizando-se a luz
• Beneficiário: Andre Bohomoletz Henriques
• Modalidade de apoio: Auxílio à Pesquisa - Regular