Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

Autor(es)

Balanta, M. A. G. ^[1] ; Brasil, M. J. S. P. ^[1] ; Iikawa, F. ^[1] ; Brum, J. A. ^[1] ; Mendes, Udson C. ^[1] ; Danilov, Yu. A. ^[2] ; Dorokhin, M. V. ^[2] ; Vikhrova, Olga V. ^[2] ; Zvonkov, Boris N. ^[2]

Afiliação do(s) autor(es)

^[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil

^[2] Lobachevsky State Univ Nizhni Novgorod, Physicotech Res Inst, Nizhnii Novgorod 603950 - Russia

• Tipo de documento: Artigo Científico
• Fonte: Journal of Applied Physics; v. 116, n. 20 NOV 28 2014.
• Citações Web of Science: 5

Resumo

We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks. (C) 2014 AIP Publishing LLC. (AU)

• Processo FAPESP: 11/20985-6 - Spin de portadores em estruturas semicondutoras investigado por técnicas ópticas
• Beneficiário: Maria José Santos Pompeu Brasil
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 10/11393-5 - Propriedades Eletrônicas e Ópticas de Semicondutores de Baixa Dimensionalidade
• Beneficiário: Udson Cabral Mendes
• Modalidade de apoio: Bolsas no Brasil - Doutorado
• Processo FAPESP: 11/50975-2 - Propriedades opticas de nanoestruturas semicondutoras
• Beneficiário: Fernando Iikawa
• Modalidade de apoio: Auxílio à Pesquisa - Regular