| Full text | |
| Author(s): |
Balanta, M. A. G.
[1]
;
Brasil, M. J. S. P.
[1]
;
Iikawa, F.
[1]
;
Brum, J. A.
[1]
;
Mendes, Udson C.
[1]
;
Danilov, Yu. A.
[2]
;
Dorokhin, M. V.
[2]
;
Vikhrova, Olga V.
[2]
;
Zvonkov, Boris N.
[2]
Total Authors: 9
|
| Affiliation: | [1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[2] Lobachevsky State Univ Nizhni Novgorod, Physicotech Res Inst, Nizhnii Novgorod 603950 - Russia
Total Affiliations: 2
|
| Document type: | Journal article |
| Source: | Journal of Applied Physics; v. 116, n. 20 NOV 28 2014. |
| Web of Science Citations: | 5 |
| Abstract | |
We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks. (C) 2014 AIP Publishing LLC. (AU) | |
| FAPESP's process: | 11/20985-6 - Spin of carriers in semiconductor structures investigated by optical techniques |
| Grantee: | Maria José Santos Pompeu Brasil |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 10/11393-5 - Electronic and Optical Properties of Low-Dimensional Semiconductors |
| Grantee: | Udson Cabral Mendes |
| Support Opportunities: | Scholarships in Brazil - Doctorate |