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Grant number: 14/24288-6
Support type:Regular Research Grants
Duration: October 01, 2015 - September 30, 2017
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal researcher:Iouri Poussep
Grantee:Iouri Poussep
Home Institution: Instituto de Física de São Carlos (IFSC). Universidade de São Paulo (USP). São Carlos , SP, Brazil


Multi-component electron systems formed in one-dimensional (nanowires) and quasi-three-dimensional (multiple quantum wells) semiconductor hetero-structures will be investigated. We plan to study structural and electronic properties in different hetero-structured multiple well GaAs/GaP and InAs/InP nanowires grown by molecular beam epitaxy. Principally, the method which allows studying optical responses of individual quantum wells of a multi-component system, developed in our recent works, will be used. Raman scattering, time resolved magneto-photoluminescence and magneto-transport measurements will be performed. One of the purposes of the project is to develop methods of fabrication of devices based on multiple well hetero-structures formed in nanowires that principally can be used in optoelectronics as solar cells and detectors of radiation. Moreover, one-dimensional electron system modulated by a potential of multiple wells present an interesting and unique structure where electron-electron interaction effects may cause new phenomena predicted theoretically. These effects also will be investigated in multiple quantum well layered structures based on AlGaAs and InGaAsP alloys. The effects of electron-electron interaction result in formation of collective quantum states e fundamentally determine the magnetic field induced spatial and energetic re-distribution of electrons over the quantum wells. The study of the collective effects in multi-component electron systems is the principal goal of this project. (AU)

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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
TITO, M. A.; PUSEP, YU. A. Determination of mobility edge in presence of metal-to-insulator transition. SUPERLATTICES AND MICROSTRUCTURES, v. 104, p. 156-161, APR 2017. Web of Science Citations: 1.

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