An accurate closed-expression model for FinFETs parasitic resistance

Autor(es)

Pereira, A. S. N. ^[1] ; Giacomini, R. ^[1]

Afiliação do(s) autor(es)

^[1] Ctr Univ FEI, Dept Elect Engn, BR-09850 Sao Bernardo Do Campo, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: MICROELECTRONICS RELIABILITY; v. 55, n. 3-4, p. 470-480, FEB-MAR 2015.
• Citações Web of Science: 3

Resumo

A new closed-expression analytic model for parasitic resistance of FinFETs (Fin-Field-Effect-Transistors), which allows a fast estimation of this parasitic element, is proposed and evaluated in this work. The parasitic resistance is one of the most significant parameter for performance and reliability degradations in scaled devices. The model is based in the current distribution observed in three-dimensional simulations and is very accurate when compared to experimental data. The contact resistance was modeled using a variable impedance transmission line model, to approximate source and drain geometries to the real shapes of these regions. The model has a closed expression, without adjustment parameters. All results were compared with two previous models presented in literature, and the proposed model was the one which presented the best accuracy: percent errors below 10% for different source and drain doping concentrations, contact lengths, extension lengths, contact resistivity and fin widths. (C) 2015 Elsevier Ltd. All rights reserved. (AU)

• Processo FAPESP: 12/12700-4 - Modelos Analíticos de Comportamento Elétrico Estático para FinFETs
• Beneficiário: Arianne Soares do Nascimento Pereira
• Modalidade de apoio: Bolsas no Brasil - Doutorado