Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures

Autor(es)

Balanta, M. A. G. ^{[1, 2]} ; Brasil, M. J. S. P. ^[1] ; Iikawa, F. ^[1] ; Mendes, Udson C. ^{[1, 3]} ; Brum, J. A. ^[1] ; Danilov, Yu. A. ^[4] ; Dorokhin, M. V. ^[4] ; Vikhrova, O. V. ^[4] ; Zvonkov, B. N. ^[4]

Afiliação do(s) autor(es)

^[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil

^[2] Univ Fed Sao Carlos, Dept Fis, CP 676, BR-13565905 Sao Carlos, SP - Brazil

^[3] Univ Paris Diderot, Univ Paris 06, CNRS, Sorbonne Univ, Sorbonne Paris Cite, Lab Pierre Aigrain Ecole Normale Super, PSL Res U, 24 Rue Lhomond, F-75231 Paris 05 - France

^[4] State Univ Nizhny Novgorod, Res Inst, Nizhnii Novgorod - Russia

• Tipo de documento: Artigo Científico
• Fonte: SCIENTIFIC REPORTS; v. 6, APR 15 2016.
• Citações Web of Science: 5

Resumo

( We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs: Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures. (AU)

• Processo FAPESP: 11/20985-6 - Spin de portadores em estruturas semicondutoras investigado por técnicas ópticas
• Beneficiário: Maria José Santos Pompeu Brasil
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 10/11393-5 - Propriedades Eletrônicas e Ópticas de Semicondutores de Baixa Dimensionalidade
• Beneficiário: Udson Cabral Mendes
• Modalidade de apoio: Bolsas no Brasil - Doutorado
• Processo FAPESP: 11/50975-2 - Propriedades opticas de nanoestruturas semicondutoras
• Beneficiário: Fernando Iikawa
• Modalidade de apoio: Auxílio à Pesquisa - Regular