| Full text | |
| Author(s): |
Balanta, M. A. G.
[1, 2]
;
Brasil, M. J. S. P.
[1]
;
Iikawa, F.
[1]
;
Mendes, Udson C.
[1, 3]
;
Brum, J. A.
[1]
;
Danilov, Yu. A.
[4]
;
Dorokhin, M. V.
[4]
;
Vikhrova, O. V.
[4]
;
Zvonkov, B. N.
[4]
Total Authors: 9
|
| Affiliation: | [1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Fis, CP 676, BR-13565905 Sao Carlos, SP - Brazil
[3] Univ Paris Diderot, Univ Paris 06, CNRS, Sorbonne Univ, Sorbonne Paris Cite, Lab Pierre Aigrain Ecole Normale Super, PSL Res U, 24 Rue Lhomond, F-75231 Paris 05 - France
[4] State Univ Nizhny Novgorod, Res Inst, Nizhnii Novgorod - Russia
Total Affiliations: 4
|
| Document type: | Journal article |
| Source: | SCIENTIFIC REPORTS; v. 6, APR 15 2016. |
| Web of Science Citations: | 5 |
| Abstract | |
( We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs: Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures. (AU) | |
| FAPESP's process: | 11/20985-6 - Spin of carriers in semiconductor structures investigated by optical techniques |
| Grantee: | Maria José Santos Pompeu Brasil |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 10/11393-5 - Electronic and Optical Properties of Low-Dimensional Semiconductors |
| Grantee: | Udson Cabral Mendes |
| Support Opportunities: | Scholarships in Brazil - Doctorate |