Busca avançada
Ano de início
Entree
(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Synthesis of Transparent Semiconducting Metal-oxides via Polymeric Precursor Route for Application in Thin-film Field-Effect Transistors

Texto completo
Autor(es):
Amorim, Cleber A. [1] ; Gozzi, Giovani [1] ; Chinaglia, Dante L. [1] ; dos Santos, Francisco Jose [1] ; Santos, Lucas Fugikawa [1, 2]
Número total de Autores: 5
Afiliação do(s) autor(es):
[1] Univ Estadual Paulista UNESP, Dept Fis, Av 24A, 1515, BR-13500970 Rio Claro, SP - Brazil
[2] Univ Estadual Paulista UNESP, Dept Fis, R Cristovao Colombo 2265, BR-15054000 Sao Jose Do Rio Preto, SP - Brazil
Número total de Afiliações: 2
Tipo de documento: Artigo Científico
Fonte: MRS ADVANCES; v. 1, n. 7, p. 489-494, 2016.
Citações Web of Science: 1
Resumo

Solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) obtained via hydrolysis/pyrolysis of an organic precursor present an excellent technique to obtain high performance electronic devices with low manufacturing cost. In the current work, we propose the use of an alternative deposition method, based on a polymeric precursor route (known as Pechini), to obtain solution-processed ZnO compact films as the active layer of TFTs. The elimination of the organic phase and the formation of inorganic thin-films was carried out by thermal treatment at different temperatures (ranging from 200 degrees C to 500 degrees C) and at different times (from 5 min to 2 hours), being monitored by UV-vis and infrared (IR) optical absorption spectroscopy. It was observed that, for temperatures above 400 degrees C and treatment times superior to 30 min, the organic phase was completely eliminated, remaining only the inorganic (metal oxide) phase. The optical bandgap of the resulting ZnO films, determined from UV-vis absorption, is about 3.4 eV. The electrical characteristics (output and transfer curves) of the obtained devices demonstrate the feasibility of Pecchini method to build solution-processed metal oxide TFTs. The results for the electrical mobility of the majority charge-carriers (electrons) and for the threshold voltage were 0.39 cm(2).V-1.s(-1) and 0.45 V, respectively. (AU)

Processo FAPESP: 13/24461-7 - Estudo da influência do controle de atmosfera no desempenho de transistores de filme fino para aplicações em circuitos transparentes e/ou flexíveis
Beneficiário:Lucas Fugikawa Santos
Linha de fomento: Auxílio à Pesquisa - Regular
Processo FAPESP: 08/57706-4 - Instituto Nacional de Eletrônica Orgânica (INEO)
Beneficiário:Roberto Mendonça Faria
Linha de fomento: Auxílio à Pesquisa - Temático