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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Synthesis of Transparent Semiconducting Metal-oxides via Polymeric Precursor Route for Application in Thin-film Field-Effect Transistors

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Author(s):
Amorim, Cleber A. [1] ; Gozzi, Giovani [1] ; Chinaglia, Dante L. [1] ; dos Santos, Francisco Jose [1] ; Santos, Lucas Fugikawa [1, 2]
Total Authors: 5
Affiliation:
[1] Univ Estadual Paulista UNESP, Dept Fis, Av 24A, 1515, BR-13500970 Rio Claro, SP - Brazil
[2] Univ Estadual Paulista UNESP, Dept Fis, R Cristovao Colombo 2265, BR-15054000 Sao Jose Do Rio Preto, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: MRS ADVANCES; v. 1, n. 7, p. 489-494, 2016.
Web of Science Citations: 1
Abstract

Solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) obtained via hydrolysis/pyrolysis of an organic precursor present an excellent technique to obtain high performance electronic devices with low manufacturing cost. In the current work, we propose the use of an alternative deposition method, based on a polymeric precursor route (known as Pechini), to obtain solution-processed ZnO compact films as the active layer of TFTs. The elimination of the organic phase and the formation of inorganic thin-films was carried out by thermal treatment at different temperatures (ranging from 200 degrees C to 500 degrees C) and at different times (from 5 min to 2 hours), being monitored by UV-vis and infrared (IR) optical absorption spectroscopy. It was observed that, for temperatures above 400 degrees C and treatment times superior to 30 min, the organic phase was completely eliminated, remaining only the inorganic (metal oxide) phase. The optical bandgap of the resulting ZnO films, determined from UV-vis absorption, is about 3.4 eV. The electrical characteristics (output and transfer curves) of the obtained devices demonstrate the feasibility of Pecchini method to build solution-processed metal oxide TFTs. The results for the electrical mobility of the majority charge-carriers (electrons) and for the threshold voltage were 0.39 cm(2).V-1.s(-1) and 0.45 V, respectively. (AU)

FAPESP's process: 08/57706-4 - National Institute of Science and Technology on Organic Electronics (INEO)
Grantee:Roberto Mendonça Faria
Support Opportunities: Research Projects - Thematic Grants
FAPESP's process: 13/24461-7 - Influence of the atmosphere control on the performance of thin-film transistors for applications in Flexible/Transparent circuitry
Grantee:Lucas Fugikawa Santos
Support Opportunities: Regular Research Grants