Direct evidence of traps controlling the carriers transport in SnO2 nanobelts

Autor(es)

Berengue, Olivia M. ^[1] ; Chiquito, Adenilson J. ^[2]

Afiliação do(s) autor(es)

^[1] Univ Estadual Paulista Unesp, Dept Fis & Quim, LCCTnano, Fac Engn Guaratingueta, Campus Guaratingueta, Sao Paulo - Brazil

^[2] Univ Fed Sao Carlos, Dept Fis, NanO LaB, CP 676, BR-13565905 Sao Paulo - Brazil

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF SEMICONDUCTORS; v. 38, n. 12 DEC 2017.
• Citações Web of Science: 0

Resumo

This work reports on direct evidence of localized states in undoped SnO2 nanobelts. Effects of disorder and electron localization were observed in Schottky barrier dependence on the temperature and in thermally stimulated currents. A transition from thermal activation to hopping transport mechanisms was also observed. The energy levels found by thermally stimulated current experiments were in close agreement with transport data confirming the role of localization in determining the properties of devices. (AU)

• Processo FAPESP: 13/19692-0 - Estudo quantitativo das características eletrônicas de junções metal-nanofios de óxidos metálicos
• Beneficiário: Adenilson José Chiquito
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 15/21816-4 - Síntese de nanoestruturas semicondutoras baseadas nos óxidos de estanho e antimônio: estudo das propriedades estruturais e de transporte eletrônico
• Beneficiário: Olivia Maria Berengue
• Modalidade de apoio: Auxílio à Pesquisa - Regular