| Full text | |
| Author(s): |
Total Authors: 2
|
| Affiliation: | [1] Univ Estadual Paulista Unesp, Dept Fis & Quim, LCCTnano, Fac Engn Guaratingueta, Campus Guaratingueta, Sao Paulo - Brazil
[2] Univ Fed Sao Carlos, Dept Fis, NanO LaB, CP 676, BR-13565905 Sao Paulo - Brazil
Total Affiliations: 2
|
| Document type: | Journal article |
| Source: | JOURNAL OF SEMICONDUCTORS; v. 38, n. 12 DEC 2017. |
| Web of Science Citations: | 0 |
| Abstract | |
This work reports on direct evidence of localized states in undoped SnO2 nanobelts. Effects of disorder and electron localization were observed in Schottky barrier dependence on the temperature and in thermally stimulated currents. A transition from thermal activation to hopping transport mechanisms was also observed. The energy levels found by thermally stimulated current experiments were in close agreement with transport data confirming the role of localization in determining the properties of devices. (AU) | |
| FAPESP's process: | 13/19692-0 - Quantitative study of the electronic characteristics of metal-metal oxides nanowires contacts |
| Grantee: | Adenilson José Chiquito |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 15/21816-4 - Growth of semiconductor nanostructures based on tin and antimony oxides: study of structural and electronic transport properties |
| Grantee: | Olivia Maria Berengue |
| Support Opportunities: | Regular Research Grants |