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Doping in SnO2 nanowires: growth and characterization of ato nanowires (Sb:SnO2)

Grant number: 17/00059-6
Support type:Scholarships in Brazil - Scientific Initiation
Effective date (Start): May 01, 2017
Effective date (End): January 31, 2018
Field of knowledge:Physical Sciences and Mathematics - Physics
Principal Investigator:Adenilson José Chiquito
Grantee:Mark Hoffmann Wallner
Home Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil

Abstract

The objective of this proposal is the production and characterization of electronic devices based on nanowires /nanobelts built from Sb doped SnO2. It is intended to synthesize intrinsic and doped nanobelts with antimony, which is particularly interesting material in the construction of transparent conductive oxides. Through the construction of devices with these materials one can carry out investigations on the influence of doping on the transport mechanisms. With undoped and doped nanostructures, problems such as localization and charge transport will be addressed by investigating the various processes of scattering in nanostructures, but particularly the processes of localization of carriers (due to the disorder) that determine the behavior of the devices. In this work, the activities proposed to the candidate aim both to learn basic techniques for the production of samples, construction of devices and study of their properties, as well as the analysis and interpretation of the electronic properties presented by the devices. (AU)