Bismuth doping on CuGaS2 thin films: structural and optical properties

Autor(es)

Andrade, Jr., Marcos A. S. ^[1] ; Mascaro, Lucia H. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Carlos, Dept Chem, Rod Washington Luiz, Km 235, BR-13565905 Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: MRS COMMUNICATIONS; v. 8, n. 2, p. 504-508, JUN 2018.
• Citações Web of Science: 0

Resumo

In this work, we present a solvothermal method to prepare bismuth (Bi)-doped CuGaS2 chalcopyrite nanocrystals ink and apply it to an all-solution-processed approach for the preparation of films with a thickness of approximately 730 nm and with enhanced optical properties and lower band gap energy than the undoped semiconductor films. The low-cost deposition method is comprised by spray deposition of the chalcogenide nanocrystals ink onto the molybdenum substrates, producing microcrystalline films with grains larger than 400 nm originated from coalescence of Bi-doped nanocrystals. Bi-doped CuGaS2 microcrystalline films are a good candidate to be applied as an absorber layer in thin-film solar cells. (AU)

• Processo FAPESP: 14/50249-8 - Green chemistry: sustainable synthetic methods employing benign solvents, safer reagents, and bio-renewable feedstock
• Beneficiário: Arlene Gonçalves Corrêa
• Modalidade de apoio: Auxílio à Pesquisa - Programa Centros de Pesquisa em Engenharia
• Processo FAPESP: 13/07296-2 - CDMF - Centro de Desenvolvimento de Materiais Funcionais
• Beneficiário: Elson Longo da Silva
• Modalidade de apoio: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs
• Processo FAPESP: 17/15144-9 - Calcogenetos dopados com metais para aplicação em células solares de bandas intermediárias
• Beneficiário: Marcos Antonio Santana Andrade Junior
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado