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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

Texto completo
Autor(es):
Hartmann, F. [1, 2] ; Pfenning, A. [1, 2] ; Rebello Sousa Dias, M. [3, 4] ; Langer, F. [1, 2] ; Hoefling, S. [5, 1, 2] ; Kamp, M. [1, 2] ; Worschech, L. [1, 2] ; Castelano, L. K. [3] ; Marques, G. E. [3] ; Lopez-Richard, V. [3]
Número total de Autores: 10
Afiliação do(s) autor(es):
[1] Univ Wurzburg, Inst Phys, Tech Phys, D-97074 Wurzburg - Germany
[2] Univ Wurzburg, Inst Phys, Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg - Germany
[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[4] Univ Richmond, Dept Phys, Gottwald Ctr Sci, Richmond, VA 23173 - USA
[5] Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife - Scotland
Número total de Afiliações: 5
Tipo de documento: Artigo Científico
Fonte: Journal of Applied Physics; v. 122, n. 15 OCT 21 2017.
Citações Web of Science: 4
Resumo

We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms, and thus, could be applied as an alternative route towards optoelectronic applications of tunneling devices. Published by AIP Publishing. (AU)

Processo FAPESP: 14/02112-3 - Fenômenos ópticos e de transporte em nano-dispositvos
Beneficiário:Victor Lopez Richard
Linha de fomento: Auxílio à Pesquisa - Regular