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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

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Author(s):
Hartmann, F. [1, 2] ; Pfenning, A. [1, 2] ; Rebello Sousa Dias, M. [3, 4] ; Langer, F. [1, 2] ; Hoefling, S. [5, 1, 2] ; Kamp, M. [1, 2] ; Worschech, L. [1, 2] ; Castelano, L. K. [3] ; Marques, G. E. [3] ; Lopez-Richard, V. [3]
Total Authors: 10
Affiliation:
[1] Univ Wurzburg, Inst Phys, Tech Phys, D-97074 Wurzburg - Germany
[2] Univ Wurzburg, Inst Phys, Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg - Germany
[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[4] Univ Richmond, Dept Phys, Gottwald Ctr Sci, Richmond, VA 23173 - USA
[5] Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife - Scotland
Total Affiliations: 5
Document type: Journal article
Source: Journal of Applied Physics; v. 122, n. 15 OCT 21 2017.
Web of Science Citations: 4
Abstract

We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms, and thus, could be applied as an alternative route towards optoelectronic applications of tunneling devices. Published by AIP Publishing. (AU)

FAPESP's process: 14/02112-3 - Optical and transport phenomena in nano-devices
Grantee:Victor Lopez Richard
Support Opportunities: Regular Research Grants