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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Analysis of structural distortion in Eshelby twisted InP nanowires by scanning precession electron diffraction

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Autor(es):
Ugarte, Daniel [1, 2] ; Tizei, Luiz H. G. [3] ; Cotta, Monica A. [1] ; Ducati, Caterina [2] ; Midgley, Paul A. [2] ; Eggeman, Alexander S. [4, 2]
Número total de Autores: 6
Afiliação do(s) autor(es):
[1] Univ Estadual Campinas UNICAMP, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS - England
[3] Univ Paris Sud, Lab Phys Solides, CNRS UMR8502, F-91405 Orsay - France
[4] Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs - England
Número total de Afiliações: 4
Tipo de documento: Artigo Científico
Fonte: NANO RESEARCH; v. 12, n. 4, p. 939-946, APR 2019.
Citações Web of Science: 0
Resumo

Transmission electron microscopes (TEM) are widely used in nanotechnology research. However, it is still challenging to characterize nanoscale objects; their small size coupled with dynamical diffraction makes interpreting real- or reciprocal-space data difficult. Scanning precession electron diffraction ((S)PED) represents an invaluable contribution, reducing the dynamical contributions to the diffraction pattern at high spatial resolution. Here a detailed analysis of wurtzite InP nanowires (30-40 nm in diameter) containing a screw dislocation and an associated wire lattice torsion is presented. It has been possible to characterize the dislocation with great detail (Burgers and line vector, handedness). Through careful measurement of the strain field and comparison with dynamical electron diffraction simulations, this was found to be compatible with a Burgers vector modulus equal to one hexagonal lattice cell parameter despite the observed crystal rotation rate being larger (ca. 20%) than that predicted by classical elastic theory for the nominal wire diameter. These findings corroborate the importance of the (S)PED technique for characterizing nanoscale materials. (AU)

Processo FAPESP: 13/02300-1 - Nanofios semicondutores: mecanismos de formação e aplicação em biossensores
Beneficiário:Mônica Alonso Cotta
Linha de fomento: Auxílio à Pesquisa - Regular
Processo FAPESP: 13/10957-0 - Interação Xylella fastidiosa-inseto vetor-planta hospedeira e abordagens para o controle da clorose variegada dos citros e cancro cítrico
Beneficiário:Alessandra Alves de Souza
Linha de fomento: Auxílio à Pesquisa - Temático