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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures

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Autor(es):
Wetter, Niklaus Ursus [1] ; da Silva, Diego Silverio [2] ; Pires Kassab, Luciana Reyes [3] ; Jimenez-Villar, Ernesto [1]
Número total de Autores: 4
Afiliação do(s) autor(es):
[1] Inst Pesquisas Energet & Nucl CNEN IPEN SP, Ctr Lasers & Aplicacoes, Ave Prof Lineu Prestes 2242, BR-05508000 Sao Paulo - Brazil
[2] Univ Sao Paulo, Escola Politecn, BR-05508970 Sao Paulo - Brazil
[3] Univ Estadual Paulista, CEETEPS, Fac Tecnol Sao Paulo, BR-01124060 Sao Paulo - Brazil
Número total de Afiliações: 3
Tipo de documento: Artigo Científico
Fonte: Journal of Alloys and Compounds; v. 794, p. 120-126, JUL 25 2019.
Citações Web of Science: 0
Resumo

Optical waveguide amplifiers have seen a growing interest in the last years due to their applications in telecommunication. This paper reports a notable increase of the relative gain of Yb3+/Er3+ codoped Bi2O3-GeO2 waveguides by introducing disorder in the form of silicon nanostructure as scattering centers. A photoluminescence enhancement of about 10 times for the 520 nm and 1530 nm emission bands is observed in the waveguides when the silicon nanostructures are introduced. Increase of the Yb3+/Er3+ effective absorption, due to the scattering provided by the silicon nanostructures, and decrease of {[}Bi+], caused by the introduction of silicon, are proposed as likely causes for the luminescence and gain enhancement. The pedestal waveguides were fabricated by RF-sputtering followed by optical lithography and reactive ion etching. RF-sputtering of silicon together with Yb/Er and Bi2O3-GeO2 glass, followed by heat treatment, produced Yb3+/Er3+ codoped Bi2O3-GeO2 waveguides with silicon nanostructures of size 25-30 nm. The resulting relative gain reached 5.5 dB/cm at 1542 nm representing an enhancement of 50% with respect to waveguides without silicon nanostructures. This strategy of introducing appropriate disorder may open an avenue for designing and manufacture of novel photonic devices in this emerging field of integrated optics. (c) 2019 Elsevier B.V. All rights reserved. (AU)

Processo FAPESP: 13/26113-6 - Microusinagem com laser de pulsos ultracurtos aplicada na produção e controle de circuitos optofluídicos
Beneficiário:Wagner de Rossi
Linha de fomento: Auxílio à Pesquisa - Temático
Processo FAPESP: 17/05854-9 - Localização de luz: uma maneira para construção de dispositivos fotônicos avançados
Beneficiário:Niklaus Ursus Wetter
Linha de fomento: Auxílio à Pesquisa - Pesquisador Visitante - Internacional