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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires

Texto completo
Autor(es):
Koivusalo, Eero [1] ; Hilska, Joonas [1] ; Galeti, Helder V. A. [2] ; Galvao Gobato, Yara [2] ; Guina, Mircea [1] ; Hakkarainen, Teemu [1]
Número total de Autores: 6
Afiliação do(s) autor(es):
[1] Tampere Univ, Phys Unit, Optoelect Res Ctr, Tampere - Finland
[2] Univ Fed Sao Carlos, Exact & Technol Sci Ctr, Sao Carlos, SP - Brazil
Número total de Afiliações: 2
Tipo de documento: Artigo Científico
Fonte: Nanotechnology; v. 31, n. 46 NOV 13 2020.
Citações Web of Science: 0
Resumo

Precise control and broad tunability of the growth parameters are essential in engineering the optical and electrical properties of semiconductor nanowires (NWs) to make them suitable for practical applications. To this end, we report the effect of As species, namely As(2)and As-4, on the growth of self-catalyzed GaAs based NWs. The role of As species is further studied in the presence of Te as n-type dopant in GaAs NWs and Sb as an additional group V element to form GaAsSb NWs. Using As(4)enhances the growth of NWs in the axial direction over a wide range of growth parameters and diminishes the tendency of Te and Sb to reduce the NW aspect ratio. By extending the axial growth parameter window, As(4)allows growth of GaAsSb NWs with up to 47% in Sb composition. On the other hand, As(2)favors sidewall growth which enhances the growth in the radial direction. Thus, the selection of As species is critical for tuning not only the NW dimensions, but also the incorporation mechanisms of dopants and ternary elements. Moreover, the commonly observed dependence of twinning on Te and Sb remains unaffected by the As species. By exploiting the extended growth window associated with the use of As(4,)enhanced Sb incorporation and optical emission up to 1400 nm wavelength range is demonstrated. This wavelength corresponds to the telecom E-band, which opens new prospects for this NW material system in future telecom applications while simultaneously enabling their integration to the silicon photonics platform. (AU)

Processo FAPESP: 19/07442-5 - Nanostruturas semicondutoras bismuto diluídas e novos materiais para aplicações no infravermelho médio
Beneficiário:Helder Vinícius Avanço Galeti
Linha de fomento: Auxílio à Pesquisa - Regular
Processo FAPESP: 14/50513-7 - Propriedades de transporte de heteroestruturas semicondutoras III-Bi-V para dispositivos fotônicos avançados
Beneficiário:Helder Vinícius Avanço Galeti
Linha de fomento: Auxílio à Pesquisa - Regular