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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry

Texto completo
Autor(es):
Malafronte, A. A. [1] ; Petri, A. R. [1] ; Goncalves, J. A. C. [2] ; Barros, S. F. [1, 3] ; Bueno, C. C. [2] ; Maidana, N. L. [1] ; Mangiarotti, A. [1] ; Martins, M. N. [1] ; Quivy, A. A. [1] ; Vanin, V. R. [1]
Número total de Autores: 10
Afiliação do(s) autor(es):
[1] Univ Sao Paulo, Inst Fis, Rua Matao 1371, BR-05508090 Sao Paulo - Brazil
[2] Comissao Nacl Energia Nucl, Inst Pesquisas Energet & Nucl, Sao Paulo - Brazil
[3] Inst Fed Sao Paulo, Rua Primeiro Maio 500, BR-08571050 Itaquaquecetuba, SP - Brazil
Número total de Afiliações: 3
Tipo de documento: Artigo Científico
Fonte: Radiation Physics and Chemistry; v. 179, FEB 2021.
Citações Web of Science: 0
Resumo

Silicon PIN (p-type-intrinsic-n-type) photodiodes are well suited as particle detectors. Here the interest is on a low-cost solution by repurposing a commercial device meant to be used as a light sensor. The intended application is to measure the energy spectra of electrons scattered by thin metallic foils covering small angles close to the beam of the accelerator. The main requirements for a suitable device are: 1) a low-cost solution to allow frequent replacements; 2) a small size to avoid as much as possible an unused area that contributes with unnecessary capacitance; 3) a good energy resolution; and 4) an easy repurposing as a charged-particle detector. The photodiode type BPX 65 manufactured by Osram (R) fulfils well these requirements. Four samples of these commercial devices have been electrically characterised with respect to reverse current and depleted-region capacitance. At the selected working point of 18 V, comfortably below the maximum rating of 20 V recommended by the manufacturer for continuous operation, the total thickness of the depleted and intrinsic regions is estimated to be (60 +/- 3) mu m. For the four samples considered, the measured reverse currents for a reverse bias of 18 V are around 0.1 nA, well below the typical value specified by the manufacturer (1 nA). To evaluate the performance of the device as a detector, energy spectra have been acquired for gamma-rays with energies from 10 to 140 keV using Am-241, Ba-133, and Co-57 radioactive sources. The resolution of the BPX 65 encountered with the gamma-rays emitted by Am-241 at 59.5-keV is approximate to 2.5 keV (FWHM - Full Width at Half Maximum), which is close to the value obtained with a pulser, showing that its main limitation is the electronic chain employed in the setup. The response function to monoenergetic electrons in the same energy range is studied in the companion paper. (AU)

Processo FAPESP: 16/13116-5 - Medidas sistemáticas do espalhamento múltiplo de elétrons e prótons com energias até 5 MEV
Beneficiário:Alessio Mangiarotti
Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores
Processo FAPESP: 17/12661-2 - Medidas integrais de espalhamento múltiplo de elétrons com energias de até 1,9 MeV
Beneficiário:Anna Raquel Petri
Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado