Ionizing radiation hardness tests of GaN HEMTs for harsh environments

Autor(es)

Vilas Boas, Alexis C. ^[1] ; de Melo, M. A. A. ^[1] ; Santos, R. B. B. ^[1] ; Giacomini, R. ^[1] ; Medina, N. H. ^[2] ; Seixas, L. E. ^[3] ; Finco, S. ^[3] ; Palomo, F. R. ^[4] ; Romero-Maestre, A. ^[4] ; Guazzelli, Marcilei A. ^[1]

Afiliação do(s) autor(es)

^[1] Ctr Univ FEI, Sao Bernardo Do Campo - Brazil

^[2] Univ Sao Paulo, Inst Fis, Sao Paulo - Brazil

^[3] Ctr Tecnol Informacao Renato Archer, Campinas - Brazil

^[4] Univ Seville, Seville - Spain

• Tipo de documento: Artigo Científico
• Fonte: MICROELECTRONICS RELIABILITY; v. 116, JAN 2021.
• Citações Web of Science: 0

Resumo

The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the Onand Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from -50 degrees C to +75 degrees C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments, because the tested devices have presented an expressive recovery of its parameters of Vth, gmmax and switching times, after accumulation of 350 krad of TID. (AU)

• Processo FAPESP: 12/03383-5 - Desenvolvimento de metodologia de ensaios de radiação em componentes eletrônicos
• Beneficiário: Nilberto Heder Medina
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 17/18181-2 - Estudo dos efeitos da radiação ionizante em um circuito retificador
• Beneficiário: Alexis Cristiano Vilas Bôas
• Modalidade de apoio: Bolsas no Brasil - Iniciação Científica