Advanced search
Start date
Betweenand
Related content
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Ionizing radiation hardness tests of GaN HEMTs for harsh environments

Full text
Author(s):
Vilas Boas, Alexis C. [1] ; de Melo, M. A. A. [1] ; Santos, R. B. B. [1] ; Giacomini, R. [1] ; Medina, N. H. [2] ; Seixas, L. E. [3] ; Finco, S. [3] ; Palomo, F. R. [4] ; Romero-Maestre, A. [4] ; Guazzelli, Marcilei A. [1]
Total Authors: 10
Affiliation:
[1] Ctr Univ FEI, Sao Bernardo Do Campo - Brazil
[2] Univ Sao Paulo, Inst Fis, Sao Paulo - Brazil
[3] Ctr Tecnol Informacao Renato Archer, Campinas - Brazil
[4] Univ Seville, Seville - Spain
Total Affiliations: 4
Document type: Journal article
Source: MICROELECTRONICS RELIABILITY; v. 116, JAN 2021.
Web of Science Citations: 0
Abstract

The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the Onand Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from -50 degrees C to +75 degrees C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments, because the tested devices have presented an expressive recovery of its parameters of Vth, gmmax and switching times, after accumulation of 350 krad of TID. (AU)

FAPESP's process: 12/03383-5 - Development of methodology for radiation tests on electronic components
Grantee:Nilberto Heder Medina
Support Opportunities: Regular Research Grants
FAPESP's process: 17/18181-2 - Study of the effects of ionizing radiation in a rectifying circuit
Grantee:Alexis Cristiano Vilas Bôas
Support Opportunities: Scholarships in Brazil - Scientific Initiation