Ionizing radiation hardness tests of GaN HEMTs for harsh environments

Author(s)

Vilas Boas, Alexis C. ^[1] ; de Melo, M. A. A. ^[1] ; Santos, R. B. B. ^[1] ; Giacomini, R. ^[1] ; Medina, N. H. ^[2] ; Seixas, L. E. ^[3] ; Finco, S. ^[3] ; Palomo, F. R. ^[4] ; Romero-Maestre, A. ^[4] ; Guazzelli, Marcilei A. ^[1]

Affiliation

^[1] Ctr Univ FEI, Sao Bernardo Do Campo - Brazil

^[2] Univ Sao Paulo, Inst Fis, Sao Paulo - Brazil

^[3] Ctr Tecnol Informacao Renato Archer, Campinas - Brazil

^[4] Univ Seville, Seville - Spain

• Document type: Journal article
• Source: MICROELECTRONICS RELIABILITY; v. 116, JAN 2021.
• Web of Science Citations: 0

Abstract

The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the Onand Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from -50 degrees C to +75 degrees C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments, because the tested devices have presented an expressive recovery of its parameters of Vth, gmmax and switching times, after accumulation of 350 krad of TID. (AU)

• FAPESP's process: 12/03383-5 - Development of methodology for radiation tests on electronic components
• Grantee: Nilberto Heder Medina
• Support Opportunities: Regular Research Grants
• FAPESP's process: 17/18181-2 - Study of the effects of ionizing radiation in a rectifying circuit
• Grantee: Alexis Cristiano Vilas Bôas
• Support Opportunities: Scholarships in Brazil - Scientific Initiation