Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6

Autor(es)

Piva, Mario M. ^{[1, 2, 3]} ; Rahn, Marein C. ^{[1, 4]} ; Thomas, Sean M. ^[1] ; Scott, Brian L. ^[1] ; Pagliuso, Pascoal G. ^[2] ; Thompson, Joe D. ^[1] ; Schoop, Leslie M. ^[5] ; Ronning, Filip ^[1] ; Rosa, Priscila F. S. ^[1]

Afiliação do(s) autor(es)

^[1] Los Alamos Natl Lab, Los Alamos, NM 87545 - USA

^[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil

^[3] Max Planck Inst Chem Phys Solids, D-01187 Dresden - Germany

^[4] Tech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden - Germany

^[5] Princeton Univ, Dept Chem, Princeton, NJ 08544 - USA

• Tipo de documento: Artigo Científico
• Fonte: CHEMISTRY OF MATERIALS; v. 33, n. 11, p. 4122-4127, JUN 8 2021.
• Citações Web of Science: 0

Resumo

Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently nontrivial topology. Here, we report the synthesis and characterization of a new family of narrow-gap semiconductors, R3Cd2As6 (R = La and Ce). Single-crystal X-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279 K in La3Cd2As6 and at 136 K in Ce3Cd2As6 and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by 13 orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square-net materials within an 14/mmm parent structure are promising clean narrow-gap semiconductors. (AU)

• Processo FAPESP: 17/10581-1 - Fenômenos emergentes em sistemas de dimensões reduzidas
• Beneficiário: Pascoal Jose Giglio Pagliuso
• Modalidade de apoio: Auxílio à Pesquisa - Projetos Especiais
• Processo FAPESP: 15/15665-3 - Estudos dos efeitos de diferenciação orbital das propriedades magnéticas e supercondutoras de compostos à base de FeAs
• Beneficiário: Mário Moda Piva
• Modalidade de apoio: Bolsas no Brasil - Doutorado Direto