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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6

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Author(s):
Piva, Mario M. [1, 2, 3] ; Rahn, Marein C. [1, 4] ; Thomas, Sean M. [1] ; Scott, Brian L. [1] ; Pagliuso, Pascoal G. [2] ; Thompson, Joe D. [1] ; Schoop, Leslie M. [5] ; Ronning, Filip [1] ; Rosa, Priscila F. S. [1]
Total Authors: 9
Affiliation:
[1] Los Alamos Natl Lab, Los Alamos, NM 87545 - USA
[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[3] Max Planck Inst Chem Phys Solids, D-01187 Dresden - Germany
[4] Tech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden - Germany
[5] Princeton Univ, Dept Chem, Princeton, NJ 08544 - USA
Total Affiliations: 5
Document type: Journal article
Source: CHEMISTRY OF MATERIALS; v. 33, n. 11, p. 4122-4127, JUN 8 2021.
Web of Science Citations: 0
Abstract

Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently nontrivial topology. Here, we report the synthesis and characterization of a new family of narrow-gap semiconductors, R3Cd2As6 (R = La and Ce). Single-crystal X-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279 K in La3Cd2As6 and at 136 K in Ce3Cd2As6 and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by 13 orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square-net materials within an 14/mmm parent structure are promising clean narrow-gap semiconductors. (AU)

FAPESP's process: 17/10581-1 - Emergent phenomena in reduced dimension systems
Grantee:Pascoal Jose Giglio Pagliuso
Support Opportunities: Special Projects
FAPESP's process: 15/15665-3 - Studies of orbital differentiation effects in the magnetic and superconducting properties of FeAs based compounds
Grantee:Mário Moda Piva
Support Opportunities: Scholarships in Brazil - Doctorate (Direct)