| Texto completo | |
| Autor(es): |
Graziano Junior, Nilton
[1]
;
Costa, Fernando J.
[1]
;
Trevisoli, Renan
[2]
;
Barraud, Sylvain
[3]
;
Doria, Rodrigo T.
[1]
Número total de Autores: 5
|
| Afiliação do(s) autor(es): | [1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo - Brazil
[2] Univ Fed ABC, UFABC, Santo Andre, SP - Brazil
[3] Univ Grenoble Alpes, LETI, CEA, F-38054 Grenoble - France
Número total de Afiliações: 3
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Solid-State Electronics; v. 186, DEC 2021. |
| Citações Web of Science: | 0 |
| Resumo | |
This paper deals with the behavior of degradation by NBTI effect in pMOS junctionless nanowire transistors (JNTs). The analysis has been performed through measurements followed by 3D numerical simulations and has shown that the increase in the oxygen precursors density close to the interface leads to the reduction of the saturation in the NBTI effect when the devices operate in partial depletion regime. Such effect can be associated to the change in the flatband voltage to more negative values as well as the threshold voltage with the increase in the precursor density. In the sequence of the work, it was shown that, as the operation temperature rises, there is an increase in the degradation of the threshold voltage due to NBTI, which is more pronounced for larger gate voltages. It was concluded that this effect could be associated to the increase in the recombination rate with the temperature, which enables the occupation of a larger amount of traps. (AU) | |
| Processo FAPESP: | 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS |
| Beneficiário: | Marcelo Antonio Pavanello |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |