Fully analytical compact model for the Q-V and C-V characteristics of cylindrical junctionless nanowire FETs

Autor(es)

de Souza, Adelcio M. ^[1] ; Celino, Daniel R. ^[1] ; Ragi, Regiane ^[1] ; Romero, Murilo A. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Sao Paulo EESC USP, Sao Carlos Sch Engn, Sao Carlos - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Microelectronics Journal; v. 119, JAN 2022.
• Citações Web of Science: 0

Resumo

This paper develops a new compact model for the Q-V and C-V characteristics of cylindrical junctionless nanowire FETs in which the nanowire radius is large enough, in such a way that quantum confinement effects can be neglected. Our model is fully analytical and valid for all bias regimes, i.e., subthreshold, partial depletion, and accumulation. The obtained Q-V and C-V characteristics, as well as their derivatives, are continuous across the full range of bias voltages. The model is fully physics-based, with no fitting parameters, and it is very intuitive, since it relies on the understanding of the device as a gated resistor. Model validation is performed against previous results in the literature, demonstrating very good agreement. (AU)

• Processo FAPESP: 18/13537-6 - Modelagem compacta de transistores MOS baseados em efeitos quânticos
• Beneficiário: Adelcio Marques de Souza
• Modalidade de apoio: Bolsas no Brasil - Doutorado