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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Fully analytical compact model for the Q-V and C-V characteristics of cylindrical junctionless nanowire FETs

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Author(s):
de Souza, Adelcio M. [1] ; Celino, Daniel R. [1] ; Ragi, Regiane [1] ; Romero, Murilo A. [1]
Total Authors: 4
Affiliation:
[1] Univ Sao Paulo EESC USP, Sao Carlos Sch Engn, Sao Carlos - Brazil
Total Affiliations: 1
Document type: Journal article
Source: Microelectronics Journal; v. 119, JAN 2022.
Web of Science Citations: 0
Abstract

This paper develops a new compact model for the Q-V and C-V characteristics of cylindrical junctionless nanowire FETs in which the nanowire radius is large enough, in such a way that quantum confinement effects can be neglected. Our model is fully analytical and valid for all bias regimes, i.e., subthreshold, partial depletion, and accumulation. The obtained Q-V and C-V characteristics, as well as their derivatives, are continuous across the full range of bias voltages. The model is fully physics-based, with no fitting parameters, and it is very intuitive, since it relies on the understanding of the device as a gated resistor. Model validation is performed against previous results in the literature, demonstrating very good agreement. (AU)

FAPESP's process: 18/13537-6 - Compact modelling of MOS transistors based on quantum effects
Grantee:Adelcio Marques de Souza
Support Opportunities: Scholarships in Brazil - Doctorate