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Compact modelling of MOS transistors based on quantum effects

Grant number: 18/13537-6
Support type:Scholarships in Brazil - Doctorate
Effective date (Start): November 01, 2018
Effective date (End): October 31, 2021
Field of knowledge:Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Circuits
Principal Investigator:Murilo Araujo Romero
Grantee:Adelcio Marques de Souza
Home Institution: Escola de Engenharia de São Carlos (EESC). Universidade de São Paulo (USP). São Carlos , SP, Brazil

Abstract

This research project is part of the doctoral program for Adélcio Marques de Souza. The present plan proposes the development of compact models for the future generations of transistors based on MOS structures, for which the inclusion of quantum effects becomes paramount. The current plan is divided into two parts: a) in the first part, the project focus on Junctionless Nanowires - JL-NW - MOSFET transistors. The goal is to extend to model us already developed for cylindrical silicon nanowires, as described in our recent publication at the IEEE Transactions on Nanotechnology. In the doctoral thesis, we aim to generalize the model for other bias regimes, material system (in particular, III-V based nanowires) and geometries (in particular, the rectangular cross section). Also very important is to incorporate non-idealities, such as Short-Channel Effects (SCE), interface traps, etc., b) in the second part, we plan to apply the accumulated experience in the previous item for the compact modelling of MOS transistors based on 2D semiconductors, i.e., semiconductor presenting a layer thickness of the order of the atomic scale. Two-dimensional materials have received a great deal of attention in recent years. The most well-known is the graphene, which, however, has no bandgap. For this reason, in electronic applications, similar materials, albeit based on silicon, germanium ou phosphorous. Another possibility is the so-called TMDs (Transition Metal Dichalcogenides), the most studied being the molybdenum disulfide, MoS2. In this task, we plan to rely on the long experience of the advisor on the modelling of HEMT transistors, also called MODFETs, whose conducting channel is also a two-dimensional system, as well as on the study of 2D-3D electronic interfaces. (AU)