Compact modelling of MOS transistors based on quantum effects

• Grant number: 18/13537-6
• Support Opportunities: Scholarships in Brazil - Doctorate
• Start date: November 01, 2018
• End date: January 31, 2023
• Field of knowledge: Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Circuits
• Principal Investigator: Murilo Araujo Romero
• Grantee: Adelcio Marques de Souza
• Host Institution: Escola de Engenharia de São Carlos (EESC). Universidade de São Paulo (USP). São Carlos , SP, Brazil

Abstract

This research project is part of the doctoral program for Adélcio Marques de Souza. The present plan proposes the development of compact models for the future generations of transistors based on MOS structures, for which the inclusion of quantum effects becomes paramount. The current plan is divided into two parts: a) in the first part, the project focus on Junctionless Nanowires - JL-NW - MOSFET transistors. The goal is to extend to model us already developed for cylindrical silicon nanowires, as described in our recent publication at the IEEE Transactions on Nanotechnology. In the doctoral thesis, we aim to generalize the model for other bias regimes, material system (in particular, III-V based nanowires) and geometries (in particular, the rectangular cross section). Also very important is to incorporate non-idealities, such as Short-Channel Effects (SCE), interface traps, etc., b) in the second part, we plan to apply the accumulated experience in the previous item for the compact modelling of MOS transistors based on 2D semiconductors, i.e., semiconductor presenting a layer thickness of the order of the atomic scale. Two-dimensional materials have received a great deal of attention in recent years. The most well-known is the graphene, which, however, has no bandgap. For this reason, in electronic applications, similar materials, albeit based on silicon, germanium ou phosphorous. Another possibility is the so-called TMDs (Transition Metal Dichalcogenides), the most studied being the molybdenum disulfide, MoS2. In this task, we plan to rely on the long experience of the advisor on the modelling of HEMT transistors, also called MODFETs, whose conducting channel is also a two-dimensional system, as well as on the study of 2D-3D electronic interfaces. (AU)

Scientific publications

(6)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

DE SOUZA, ADELCIO M.; CELINO, DANIEL R.; RAGI, REGIANE; ROMERO, MURILO A.. Fully analytical compact model for the Q-V and C-V characteristics of cylindrical junctionless nanowire FETs. Microelectronics Journal, v. 119, JAN 2022. (18/13537-6)

PLAZAS, CAIO L. M. P.; DE SOUZA, ADELCIO M.; CELINO, DANIEL R.; ROMERO, MURILO A.. Optimization of arrayed waveguide grating-filteringresponse for efficient analog radio-over-fiber fronthaul over a wavelength-division multiplexing passive optical network. TRANSACTIONS ON EMERGING TELECOMMUNICATIONS TECHNOLOGIES, v. 32, n. 1, JAN 2021. (18/13537-6)

PLAZAS, CAIO; DE SOUZA, ADELCIO; CELINO, DANIEL; ROMERO, MURILO; IEEE. Colorless WDM-PON employing Tunable VCSELs and Carrier Reuse as a 5G Analog Fronthaul. 2021 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE (IMOC), v. N/A, p. 3-pg., 2021-01-01. (18/13537-6)

CELINO, DANIEL R.; DE SOUZA, ADELCIO M.; PLAZAS, CAIO L. M. P.; RAGI, REGIANE; ROMERO, MURILO A.; IEEE. Fully Analytical Compact Model for the I-V Characteristics of Resonant Tunneling Diodes. 35TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO2021), v. N/A, p. 4-pg., 2021-01-01. (18/13537-6)

DE SOUZA, ADELCIO M.; PLAZAS, CAIO L. M. P.; CELINO, DANIEL R.; ROMERO, MURILO A.. Double-RSOA colorless WDM-PON for 5G fronthaul applications. TRANSACTIONS ON EMERGING TELECOMMUNICATIONS TECHNOLOGIES, v. N/A, p. 15-pg., 2022-12-07. (18/13537-6)

PLAZAS, CAIO L. M. P.; DE SOUZA, ADELCIO M.; CELINO, DANIEL R.; ROMERO, MURILO A.. Colorless WDM-PON fronthaul topology for beyond 5G C-RAN architectures. Optical Fiber Technology, v. 76, p. 10-pg., 2023-01-20. (18/13537-6)

Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

SOUZA, Adelcio Marques de. Compact modeling for mos transistors: junctionless nanowires and bidimensional channels. 2024. Doctoral Thesis - Universidade de São Paulo (USP). Escola de Engenharia de São Carlos (EESC/SBD) São Carlos.