| Texto completo | |
| Autor(es): |
da Silva, Bruno Cesar
;
Damasceno Couto, Odilon Divino, Jr.
;
Obata, Helio
;
Senna, Carlos Alberto
;
Archanjo, Braulio Soares
;
Iikawa, Fernando
;
Cotta, Monica Alonso
Número total de Autores: 7
|
| Tipo de documento: | Artigo Científico |
| Fonte: | ACS OMEGA; v. N/A, p. 8-pg., 2022-11-23. |
| Resumo | |
The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new structure with little available information about its emission properties compared to the most stable zinc-blend phase. Here, the effect of growth conditions of WZ GaP nano-and microstructures obtained via chemical beam epitaxy on the optical properties was studied using power-and temperature-dependent photoluminescence (PL). We showed that the PL spectra are dominated by two strong broad emission bands at 1.68 and 1.88 eV and two relatively narrow peaks at 2.04 and 2.09 eV. The broad emissions are associated with the presence of carbon and a small number of extended crystal defects, respectively. For the sharp emissions, two main radiative recombination channels were observed with ionization energies estimated in the range of 50-80 meV and lower than 10 meV. No variation of the low-temperature PL spectra was observed for samples grown at different P precursor flows, while increasing Ga content enhanced the dominant broad emission at around 1.68 eV, suggesting that the group III organometallic precursor is the main source of impurities. Finally, Be-doped samples were grown, and their characteristic optical emission at 2.03 eV was identified. These results contribute to the understanding of impurity-related luminescence in hexagonal GaP, being useful for further crystal growth optimization required for the fabrication of optoelectronic devices. (AU) | |
| Processo FAPESP: | 15/16611-4 - Nanofios semicondutores do tipo III-V: estudos de síntese voltados para aplicações em biologia |
| Beneficiário: | Mônica Alonso Cotta |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |
| Processo FAPESP: | 15/24271-9 - Junções P-N em nanofios semicondutores III-V: uma plataforma para estudos aplicados |
| Beneficiário: | Bruno César da Silva |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |
| Processo FAPESP: | 16/16365-6 - Nanoestruturas de semicondutoras III-V e suas propriedades ópticas |
| Beneficiário: | Fernando Iikawa |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |
| Processo FAPESP: | 19/07616-3 - Novos catalisadores e controle de direcionalidade em nanofios semicondutores do tipo III-V |
| Beneficiário: | Mônica Alonso Cotta |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |
| Processo FAPESP: | 12/11382-9 - Modulação ótica de sistemas nanoestruturados usando ondas acústicas de superfícies |
| Beneficiário: | Odilon Divino Damasceno Couto Júnior |
| Modalidade de apoio: | Auxílio à Pesquisa - Jovens Pesquisadores |