NBTI Dependence on Temperature in Junctionless Nanowire Transistors

Autor(es)

Graziano Junior, N. ; Trevisoli, R. ; Doria, R. T. ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 35TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO2021); v. N/A, p. 4-pg., 2021-01-01.

Resumo

This paper discusses the nature of degradation by NBTI effect in pMOS junctionless devices when varying the temperature. The results were obtained through simulations validated to experimental data. Devices with different dimensions and doping, have been subjected to a temperature range that varies between 270 and 380 K. The simulations were performed for different values of V-GT and as a result it is possible to observe that when increasing temperature up to 340 K, the threshold voltage variation due to NBTI is also increased. However, for larger temperatures the NBTI effect seems to stabilize or even reduce. (AU)

• Processo FAPESP: 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS
• Beneficiário: Marcelo Antonio Pavanello
• Modalidade de apoio: Auxílio à Pesquisa - Regular