Junctionless nanowire transistors effective channel length extraction through capacitance characteristics

Autor(es)

Silva, Everton M. ; Trevisoli, Renan ; Doria, Rodrigo T.

• Tipo de documento: Artigo Científico
• Fonte: Solid-State Electronics; v. 208, p. 5-pg., 2023-10-01.

Resumo

This work aims to extract the effective channel length (LEFF) of Junctionless Nanowire Transistors (JNT) through the maximum gate capacitance of the devices. The LEFF extraction has been done by extrapolating the maximum gate capacitance as a function of the devices' channel length (LMASK) and has shown that LEFF is around 10-15 nm longer than LMASK for devices of different channel doping concentrations. (AU)

• Processo FAPESP: 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS
• Beneficiário: Marcelo Antonio Pavanello
• Modalidade de apoio: Auxílio à Pesquisa - Regular