| Texto completo | |
| Autor(es): |
Cavallari, M. R.
;
Albertin, K. F.
;
Santos, G.
;
Ramos, C. A. S.
;
Pereyra, I.
;
Fonseca, F. J.
;
Andrade, A. M.
;
Pavanello, MA
;
Claeys, C
;
Martino, JA
Número total de Autores: 10
|
| Tipo de documento: | Artigo Científico |
| Fonte: | MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2010; v. 31, n. 1, p. 8-pg., 2010-01-01. |
| Resumo | |
We complement our previous published results on MDMO-PPV thin-film transistors by treating data according to different models that consider charge transport by hopping. Devices were processed on highly-doped silicon and ITO-covered glass substrates with dielectrics such as thermal SiO2 and PECVD deposited SiOxNy. Charge carrier mobility and threshold voltage on polymeric thin-film transistors can be better estimated considering transport dependence on carrier density, Poole-Frenkel effect and interface states. Best results were achieved on HMDS-treated SiO2, but a completely new voltage-dependence is attained. These models can be employed for a better understanding of the polymeric semiconductor behavior when in a TFT-based sensor. (AU) | |
| Processo FAPESP: | 07/06064-0 - Desenvolvimento de uma metodologia de fabricação de transistores de filmes finos orgânicos |
| Beneficiário: | Marco Roberto Cavallari |
| Modalidade de apoio: | Bolsas no Brasil - Mestrado |