A New Method for Junctionless Transistors Parameters Extraction

Autor(es)

Trevisoli, Renan ; Doria, Rodrigo T. ; de Souza, Michelly ; Pavanello, Marcelo A. ; Barraud, Sylvain ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC); v. N/A, p. 4-pg., 2017-01-01.

Resumo

This work proposes a new method for the extraction of the flatband voltage, effective nanowire width and doping concentration of junctionless nanowire transistors. The accurate extraction of such parameters is essential for the understating of the device behavior and for the prediction of its performance in circuits through analytical models. The method is validated using 3D numerical simulations and has been applied to experimental short-channel devices proving its applicability. (AU)

• Processo FAPESP: 14/18041-8 - Caracterização elétrica e modelagem de dispositivos eletrônicos avançados
• Beneficiário: Renan Trevisoli Doria
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado