On the influence of conductor, semiconductor and insulating substrate on the structure of atomic layer deposited titanium dioxide thin films

Autor(es)

Pessoa, Rodrigo Savio ; Chiappim Junior, William ; Testoni, Giorgio Ernesto ; Petraconi Filho, Gilberto ; Maciel, Homero Santiago ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 2018 33RD SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO); v. N/A, p. 6-pg., 2018-01-01.

Resumo

Titanium dioxide (TiO2) thin films were deposited on conductive (titanium and fluorine tin oxide glass), insulant (mica, cover glass and thermal SiO2 thin film on silicon) and semiconductive (silicon (100) and 4H-SiC) substrates by atomic layer deposition (ALD) technique. The metal and ligand precursors used were titanium tetrachloride and water, respectively. Grazing incidence x-ray diffraction (GIXRD) analysis was performed to investigate the dependence of crystalline phase of the as-deposited thin films on different substrates for process temperatures ranging from 150-450 degrees C. Results indicate that the ALD TiO2 crystalline phase is dependent on the substrate nature which modifies the required temperature for phase change, i.e. from amorphous to anatase to rutile. For example, for conductive substrates the temperature for formation of rutile phase is around 350 degrees C while for semiconductor substrates it was observed only from 400 degrees C. By other hand, when the substrate has an amorphous structure there is not a common rule, i.e. for mica and thermal SiO2 thin film on silicon only anatase phase was formed in all temperature range investigated while, for cover glass, it was possible to observe all stages of TiO2 phase change. highlighting the formation of brookite phase for temperatures between 300 and 350 degrees C. Moreover, it is shown that rutile phase can be obtained, in pure phase, at temperatures higher than 400 degrees C, however only for glass and titanium substrates. These results allow us to infer that less expensive Ti thin film could act as a good seed layer for growth of good quality rutile TiO2 phase, by using ALD process on Si substrate and using precursors such as TiCl4 and H2O. (AU)

• Processo FAPESP: 11/50773-0 - Núcleo de excelência em física e aplicações de plasmas
• Beneficiário: Ricardo Magnus Osório Galvão
• Modalidade de apoio: Auxílio à Pesquisa - Temático
• Processo FAPESP: 18/01265-1 - Síntese e análise microbiológica de substratos poliméricos recobertos com filmes ultra-finos de TiO2 e/ou Al2O3 pela tecnologia de deposição por camada atômica
• Beneficiário: Rodrigo Savio Pessoa
• Modalidade de apoio: Auxílio à Pesquisa - Regular