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Almalki, Abdulaziz ; Madani, Labed ; Sengouga, Nouredine ; Alhassan, Sultan ; Alotaibi, Saud ; Alhassni, Amra ; Almunyif, Amjad ; Chauhan, Jasbinder S. ; Henini, Mohamed ; Galeti, Helder Vinicius Avanco ; Gobato, Yara Galvao ; de Godoy, Marcio Peron Franco ; Andrade, Marcelo B. ; Souto, Sergio ; Zhou, Hong ; Wang, Boyan ; Xiao, Ming ; Qin, Yuan ; Zhang, Yuhao

• Tipo de documento: Artigo Científico
• Fonte: MATERIALS TODAY ELECTRONICS; v. 4, p. 12-pg., 2023-06-01.

Resumo

In this study, the effect of rapid thermal annealing (RTA) on the electrical and optical properties of NiO/ f-Ga 2 O 3 heterojunction diodes was investigated using capacitance -voltage, current -voltage, Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, photoluminescence and micro -Raman spectroscopy techniques, and SILVACOTCAD numerical simulator. The NiO is designed to be lowly -doped, allowing for the NiO full depletion at zero bias and the study of properties of f-Ga 2 O 3 and its interface with NiO. Micro -Raman results revealed good agreement with the theoretical and experimental results reported in the literature. The photoluminescence intensity of the sample after RTA is five times higher than the fresh sample due to a rise in the density of gallium and oxygen vacancies (V Ga + V O ) in the annealed f-Ga 2 O 3 samples. The current -voltage characteristics showed that annealed devices exhibited a lower ideality factor at room temperature and higher barrier height compared with fresh samples. The DLTS measurements demonstrated that the number of electrically active traps were different for the two samples. In particular, three and one electron traps were detected in fresh samples and annealed samples, respectively. SILVACO-TCAD was used to understand the distribution of the detected electron E 2 trap (E c -0.15 eV) in the fresh sample and the dominant transport mechanisms. A fairly good agreement between simulation and measurements was achieved considering a surface NiO acceptor density of about 1 x 10 19 cm - 3 and E 2 trap depth into the surface of f-Ga 2 O 3 layer of about 0.220 mu m and the effect of the most observed E c -0.75 eV trap level in f-Ga 2 O 3 . These results unveil comprehensive physics in NiO/ f- Ga 2 O 3 heterojunction and suggest that RTA is an essential process for realizing high-performance NiO/ f- Ga 2 O 3 devices. (AU)

• Processo FAPESP: 19/23488-5 - Dispositivos optoeletrônicos baseados em semicondutores bidimensionais
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 19/07442-5 - Nanostruturas semicondutoras bismuto diluídas e novos materiais para aplicações no infravermelho médio
• Beneficiário: Helder Vinícius Avanço Galeti
• Modalidade de apoio: Auxílio à Pesquisa - Regular