Simulation of a spintronic transistor: A study of its performance

Autor(es)

Pela, R. R. ^[1] ; Teles, L. K. ^[1]

Afiliação do(s) autor(es)

^[1] Inst Tecnol Aeronaut, Dept Fis, BR-12228900 Sao Jose Dos Campos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Journal of Magnetism and Magnetic Materials; v. 321, n. 8, p. 984-989, APR 2009.
• Citações Web of Science: 7

Resumo

We study theoretically the magnetic bipolar transistor, and compare its performance with common bipolar transistor. We present not only the simulation results for the characteristic curves, but also other relevant parameters related with its performance, such as: the current amplification factor, the open-loop gain, the hybrid parameters and the cutoff frequency. We noted that the spin-charge coupling introduces new phenomena that enrich the functionality characteristics of the magnetic bipolar transistor. Among other things, it has an adjustable band structure, which may be modified during the device operation; it exhibits the already known spin-voltaic effect. On the other hand, we observed that it is necessary a large g-factor to analyze the influence of the field B over the transistor. Nevertheless, we consider the magnetic bipolar transistor as a promising device for spintronic applications. (C) 2008 Elsevier B.V. All rights reserved. (AU)

• Processo FAPESP: 06/05858-0 - Estudo teórico de ligas semicondutoras com aplicações em spintrônica e optoeletrônica
• Beneficiário: Lara Kühl Teles
• Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores
• Processo FAPESP: 05/03664-0 - Estudo do desempenho de um transistor spintronico.
• Beneficiário: Ronaldo Rodrigues Pelá
• Modalidade de apoio: Bolsas no Brasil - Iniciação Científica