| Texto completo | |
| Autor(es): |
Maia, A. D. B.
[1]
;
da Silva, E. C. F.
[1]
;
Quivy, A. A.
[1]
;
Bindilatti, V.
[1]
;
de Aquino, V. M.
[2]
;
Dias, I. F. L.
[2]
Número total de Autores: 6
|
| Afiliação do(s) autor(es): | [1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil
[2] Univ Estadual Londrina, Dept Fis, BR-86051970 Londrina, PR - Brazil
Número total de Afiliações: 2
|
| Tipo de documento: | Artigo Científico |
| Fonte: | JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 45, n. 22 JUN 6 2012. |
| Citações Web of Science: | 12 |
| Resumo | |
We present effective-mass calculations of the bound-state energy levels of electrons confined inside lens-shaped InxGa1-xAs quantum dots (QDs) embedded in a GaAs matrix, taking into account the strain as well as the In gradient inside the QDs due to the strong In segregation and In-Ga intermixing present in the InxGa1-xAs/GaAs system. In order to perform the calculations, we used a continuum model for the strain, and the QDs and wetting layer were divided into their constituting monolayers, each one with a different In concentration, to be able to produce a specific composition profile. Our results clearly show that the introduction of such effects is very important if one desires to correctly reproduce or predict the optoelectronic properties of these nanostructures. (AU) | |
| Processo FAPESP: | 08/00841-7 - Responsividade e ruído de fotodetectores infravermelhos baseados em poços e pontos quânticos crescidos por epitaxia de feixe molecular |
| Beneficiário: | Alain André Quivy |
| Linha de fomento: | Auxílio à Pesquisa - Regular |