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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1-xAs quantum dots

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Maia, A. D. B. [1] ; da Silva, E. C. F. [1] ; Quivy, A. A. [1] ; Bindilatti, V. [1] ; de Aquino, V. M. [2] ; Dias, I. F. L. [2]
Total Authors: 6
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil
[2] Univ Estadual Londrina, Dept Fis, BR-86051970 Londrina, PR - Brazil
Total Affiliations: 2
Document type: Journal article
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 45, n. 22 JUN 6 2012.
Web of Science Citations: 12

We present effective-mass calculations of the bound-state energy levels of electrons confined inside lens-shaped InxGa1-xAs quantum dots (QDs) embedded in a GaAs matrix, taking into account the strain as well as the In gradient inside the QDs due to the strong In segregation and In-Ga intermixing present in the InxGa1-xAs/GaAs system. In order to perform the calculations, we used a continuum model for the strain, and the QDs and wetting layer were divided into their constituting monolayers, each one with a different In concentration, to be able to produce a specific composition profile. Our results clearly show that the introduction of such effects is very important if one desires to correctly reproduce or predict the optoelectronic properties of these nanostructures. (AU)

FAPESP's process: 08/00841-7 - Responsivity and noise of infrared photodetectors based on quantum wells and dots grown by molecular-beam epitaxy
Grantee:Alain André Quivy
Support type: Regular Research Grants