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Responsivity and noise of infrared photodetectors based on quantum wells and dots grown by molecular-beam epitaxy

Grant number: 08/00841-7
Support type:Regular Research Grants
Duration: March 01, 2009 - February 29, 2012
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Alain André Quivy
Grantee:Alain André Quivy
Home Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

In this proposal, we intend to install the setups of responsivity and noise measurements on QWIPs and QDIPs in order to fully characterize theses devices on the electrical and optical point of view. Combining these experimental data with computational simulations of the QWIPs and QDIPs properties that are being carried out at ITA in collaboration with Colonel Durante, together with the spectral results that will be obtained by FTIR (Fourier transform infrared spectroscopy) after October 2008 (still at ITA) and with I-V curves measurements that were recently implemented in our lab, we shall be able to gather in a short time the full set of data which is necessary to draw the main figures of merit of those devices in order to optimize their performance. (AU)

Scientific publications (4)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
FERNANDES, F. M.; DA SILVA, E. C. F.; QUIVY, A. A. Mid-infrared photodetection in an AlGaAs/GaAs quantum-well infrared photodetector using photoinduced noise. Journal of Applied Physics, v. 118, n. 20 NOV 28 2015. Web of Science Citations: 2.
FERNANDES, F. M.; CLARO, M. S.; DA SILVA, E. C. F.; QUIVY, A. A. Modeling noise in superlattice quantum-well infrared photodetectorsL. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 38 SEP 24 2014. Web of Science Citations: 2.
MAIA, A. D. B.; DA SILVA, E. C. F.; QUIVY, A. A.; BINDILATTI, V.; DE AQUINO, V. M.; DIAS, I. F. L. Simulation of the electronic properties of InxGa1-xAs quantum dots and their wetting layer under the influence of indium segregation. Journal of Applied Physics, v. 114, n. 8 AUG 28 2013. Web of Science Citations: 8.
MAIA, A. D. B.; DA SILVA, E. C. F.; QUIVY, A. A.; BINDILATTI, V.; DE AQUINO, V. M.; DIAS, I. F. L. The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1-xAs quantum dots. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 45, n. 22 JUN 6 2012. Web of Science Citations: 12.

Please report errors in scientific publications list by writing to: cdi@fapesp.br.