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Study of dynamic of carriers in InAs quantum dots confined in In0.15Ga0.85As quantum wells

Grant number: 15/23411-1
Support type:Scholarships in Brazil - Scientific Initiation
Effective date (Start): April 01, 2016
Effective date (End): December 31, 2016
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Jose Bras Barreto de Oliveira
Grantee:Wellington Fernando Correa Marques
Home Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil

Abstract

This project proposes to investigate experimentally aspects of the dynamics of carriers confined in self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.85As asymmetrical quantum wells, the structure called dot-in-well (DWELL). The samples were grown by molecular beam epitaxy (MBE) and characterized by photoluminescence (PL) measurements as a function of temperature and of excitation power. From the analysis of the PL results are expected to achieve relevant information about the electronic structure of the DWELL system and about the mechanisms of carriers capture, relaxation and escape; also relatively the interactions present in the relaxation process as electron-phonon and Auger scattering. Theoretical results concerning the DWELL electronic structure, obtained by the effective mass approach, and obtained from the solution of rate equations system, that govern the dynamics of the carriers, present in the literature or obtained from other studies will be used to guide the analysis of the experimental results.