| Grant number: | 17/21340-5 |
| Support Opportunities: | Research Grants - Visiting Researcher Grant - International |
| Start date: | March 01, 2018 |
| End date: | April 30, 2018 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics - Condensed Matter Physics |
| Principal Investigator: | Gennady Gusev |
| Grantee: | Gennady Gusev |
| Visiting researcher: | Alexandr Sergeevich Yaroshevich |
| Visiting researcher institution: | Siberian Branch of the Russian Academy of Sciences (SB RAS), Russia |
| Host Institution: | Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil |
| Associated research grant: | 15/16191-5 - The research in new materials involving high magnetic fields and low temperatures, AP.TEM |
Abstract
Rapidly developing physics research in the world requires international collaboration of scientists working in similar fields. Dr A.S. Yaroshevich from the Institute of Semiconductor Physics (Novosibirsk, Russia) specializes in the quantum transport. He is an author of the numerous publications. A considerable part of his research record is devoted to electronic properties of quantum wells and topological insulators, which is essential for the planned project. A.S. Yaroshevich is experienced in measurements of the quantum transport characteristics in solids. The visit of Dr. A.S. Yaroshevich will be very helpful for support of the research conducted in the New Semiconductor Materials Laboratory of the Institute of Physics of the University of Sao Paulo (LNMS-IFUSP). This collaboration between IFUSP and Institute of Physics of Semiconductors of Novosibirsk proved to be very useful and its results have been published in many papers in the physics journals with high impact factor (mostly Physical Review B and Physical Review Letters)Some of the results of this collaboration also have been reported at the International conferences on Electronic Properties of Two-Dimensional Systems, on the Physics of Semiconductors, and on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology. The objective of the project is to study experimentally quantum transport in 2D gas in GaAs wells and topological insulators based on based on HgTe well under microwave irradiation. The present research project assumes development and implementation of new methods of studies of electron transport in 2D gas. The project is focused on the fundamental physics, so its primary goals are: search for new physical phenomena, extension of the knowledge in the field, and experimental verification of the existing theories. The practical benefits of the project depend on possible applications of quantum wells for microwave photodetectors. (AU)
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