Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices

Autor(es)

Chiquito, Adenilson J. ^[1] ; Amorim, Cleber A. ^[1] ; Berengue, Olivia M. ^[1] ; Araujo, Luana S. ^[1] ; Bernardo, Eric P. ^[1] ; Leite, Edson R. ^[2]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Carlos, Dept Fis, NanO LaB, BR-13565905 Sao Carlos, SP - Brazil

^[2] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF PHYSICS-CONDENSED MATTER; v. 24, n. 22 JUN 6 2012.
• Citações Web of Science: 54

Resumo

We report on the analysis of nonlinear current-voltage characteristics exhibited by a set of blocking metal/SnO2/metal. Schottky barrier heights in both interfaces were independently extracted and their dependence on the metal work function was analyzed. The disorder-induced interface states effectively pinned the Fermi level at the SnO2 surface, leading to the observed Schottky barriers. The model is useful for any two-terminal device which cannot be described by a conventional diode configuration. (AU)

• Processo FAPESP: 09/51740-9 - Propriedades eletrônicas em nanoestruturas: nanofios de óxidos metálicos
• Beneficiário: Adenilson José Chiquito
• Modalidade de apoio: Auxílio à Pesquisa - Regular