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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices

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Author(s):
Chiquito, Adenilson J. [1] ; Amorim, Cleber A. [1] ; Berengue, Olivia M. [1] ; Araujo, Luana S. [1] ; Bernardo, Eric P. [1] ; Leite, Edson R. [2]
Total Authors: 6
Affiliation:
[1] Univ Fed Sao Carlos, Dept Fis, NanO LaB, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: JOURNAL OF PHYSICS-CONDENSED MATTER; v. 24, n. 22 JUN 6 2012.
Web of Science Citations: 59
Abstract

We report on the analysis of nonlinear current-voltage characteristics exhibited by a set of blocking metal/SnO2/metal. Schottky barrier heights in both interfaces were independently extracted and their dependence on the metal work function was analyzed. The disorder-induced interface states effectively pinned the Fermi level at the SnO2 surface, leading to the observed Schottky barriers. The model is useful for any two-terminal device which cannot be described by a conventional diode configuration. (AU)

FAPESP's process: 09/51740-9 - Electron properties in nanostructures: metallic oxide nanowires
Grantee:Adenilson José Chiquito
Support type: Regular Research Grants