Doping in SnO2 nanowires: growth and characterization of ato nanowires (Sb:SnO2)
| Grant number: | 09/51740-9 |
| Support type: | Regular Research Grants |
| Duration: | December 01, 2009 - November 30, 2011 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics |
| Principal Investigator: | Adenilson José Chiquito |
| Grantee: | Adenilson José Chiquito |
| Home Institution: | Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil |
Abstract
The basic objective of the present project is the study of the electron's transport mechanisms in nanostructures obtained from metallic oxides. Investigations of the electronic and structural disorder, dimensionality and doping (both intentional and non-intentional) roles on the electron transport will conducted. The results will be used in order to study the physical processes underlying the observed device' operation; additionally they will be used as basic information in the development of electronic and optoelectronic devices, as well. Field effect transistors and other devices in different geometries will be used for direct measurements of fundamental parameters such as the specific contact resistance. In this way, the continuity of the research activities initiated recently through FAPESP grants (2004/07311-4, 2005/51245-7 and 2007/58304-4) is also an objective of this present proposal. In these previous activities we have achieved the necessary initial conditions to the manufacture of devices based on nanostructures and also important advances in this specific area, contributing for both Physics and technological applications. From this point, we intended to make advances in the development of new nanometric scale devices by using structures with lower dimensions. The additional data from optical experiments (photo-current and photo-luminescence) will be used together with transport data, leading to a complete description of the samples/devices studied. (AU)