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Electron properties in nanostructures: metallic oxide nanowires


The basic objective of the present project is the study of the electron's transport mechanisms in nanostructures obtained from metallic oxides. Investigations of the electronic and structural disorder, dimensionality and doping (both intentional and non-intentional) roles on the electron transport will conducted. The results will be used in order to study the physical processes underlying the observed device' operation; additionally they will be used as basic information in the development of electronic and optoelectronic devices, as well. Field effect transistors and other devices in different geometries will be used for direct measurements of fundamental parameters such as the specific contact resistance. In this way, the continuity of the research activities initiated recently through FAPESP grants (2004/07311-4, 2005/51245-7 and 2007/58304-4) is also an objective of this present proposal. In these previous activities we have achieved the necessary initial conditions to the manufacture of devices based on nanostructures and also important advances in this specific area, contributing for both Physics and technological applications. From this point, we intended to make advances in the development of new nanometric scale devices by using structures with lower dimensions. The additional data from optical experiments (photo-current and photo-luminescence) will be used together with transport data, leading to a complete description of the samples/devices studied. (AU)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
KAMIMURA, H.; GOUVEIA, R. C.; DALMASCHIO, C. J.; LEITE, E. R.; CHIQUITO, A. J. Synthesis and electrical characterization of Zn3P2 nanowires. Semiconductor Science and Technology, v. 29, n. 1 JAN 2014. Web of Science Citations: 3.
SIMON, R. A.; KAMIMURA, H.; BERENGUE, O. M.; LEITE, E. R.; CHIQUITO, A. J. Disorder induced interface states and their influence on the AI/Ge nanowires Schottky devices. Journal of Applied Physics, v. 114, n. 24 DEC 28 2013. Web of Science Citations: 6.
CHIQUITO, ADENILSON J.; AMORIM, CLEBER A.; BERENGUE, OLIVIA M.; ARAUJO, LUANA S.; BERNARDO, ERIC P.; LEITE, EDSON R. Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices. JOURNAL OF PHYSICS-CONDENSED MATTER, v. 24, n. 22 JUN 6 2012. Web of Science Citations: 54.

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