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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Disorder induced interface states and their influence on the AI/Ge nanowires Schottky devices

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Simon, R. A. [1] ; Kamimura, H. [1] ; Berengue, O. M. [2] ; Leite, E. R. [3] ; Chiquito, A. J. [1]
Total Authors: 5
[1] Univ Fed Sao Carlos, NanO LaB, Dept Fis, BR-13565905 Sao Paulo - Brazil
[2] Univ Estadual Paulista, Fac Engn Guaratingueta, Dept Fis & Quim, BR-12516410 Sao Paulo - Brazil
[3] Univ Fed Sao Carlos, Lab Interdisciplinar Eletroquim & Ceram, Dept Quim, BR-13565905 Sao Paulo - Brazil
Total Affiliations: 3
Document type: Journal article
Source: Journal of Applied Physics; v. 114, n. 24 DEC 28 2013.
Web of Science Citations: 6

It has been demonstrated that the presence of oxide monolayers in semiconductor surfaces alters the electronic potential at surfaces and, consequently, can drastically affect the electronic transport features of a practical device such as a field effect transistor. In this work experimental and theoretical approaches to characterize Al/germanium nanowire Schottky devices by using samples covered with a thin oxide layer (2nm width) were explored. It was also demonstrated that the oxide layer on Ge causes a weak dependence of the metal work function on Schottky barrier heights indicating the presence of Fermi level pinning. From theoretical calculations the pinning factor S was estimated to range between 0.52 and 0.89, indicating a weak Fermi level pinning which is induced by the presence of charge localization at all nanowires' surface coming from interface states. (C) 2013 AIP Publishing LLC. (AU)

FAPESP's process: 09/51740-9 - Electron properties in nanostructures: metallic oxide nanowires
Grantee:Adenilson José Chiquito
Support type: Regular Research Grants